Raman scattering characterization on SiC

被引：92

作者：

Harima, H ^{[1
]}

机构：

[1] Kyoto Inst Technol, Dept Elect & Informat Sci, Sakyo Ku, Kyoto 6068585, Japan

来源：

MICROELECTRONIC ENGINEERING | 2006年 / 83卷 / 01期

关键词：

Raman scattering; SiC; phonon; interface; ion-implantation; UV laser;

D O I：

10.1016/j.mee.2005.10.037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Raman scattering is a powerful non-contact and non-destructive characterization tool for SiC polytypes for both the lattice and electronic properties. Here, I will briefly review two recent Raman experiments on SiC; metal/SiC interface reactions probed by visible lasers and ion-implantation damages probed by deep UV lasers. These studies utilize the opposite aspects of the probe laser, i.e. deep and shallow penetration depth into SiC. (c) 2005 Published by Elsevier B.V.

引用

页码：126 / 129

页数：4

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