DISORDER-INDUCED RAMAN-SCATTERING IN NISI2

被引：28

作者：

LI, F

LUSTIG, N

KLOSOWSKI, P

LANNIN, JS

机构：

[1] Department of Physics, Penn State University, University Park

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.41.10210

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Disorder-induced Raman scattering (DIRS) has been observed in epitaxial films of NiSi2 on (111) Si. The DIRS, which is found to have primarily A-like symmetry, is attributed to Si-site disorder. A comparison with lower-resolution inelastic-neutron-scattering measurements on polycrystalline films suggests that the Raman spectra represent a coupling-parameter-weighted density of states. © 1990 The American Physical Society.

引用

页码：10210 / 10213

页数：4

共 16 条

[1]

Catlow CRA, 1981, NONSTOICHIOMETRIC OX, P61

[2] PHOTOEMISSION AND BAND-STRUCTURE RESULTS FOR NISI-2 [J].

CHABAL, YJ ;

HAMANN, DR ;

ROWE, JE ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1982, 25 (12) :7598-7602

[3]

GELD PV, 1971, SILITSIDI PEREKHODNI

[4]

HENSEL JC, 1986, MATER RES SOC S P, V54, P499

[5] RAMAN-SCATTERING INDUCED BY CARBON VACANCIES IN TICX [J].

KLEIN, MV ;

HOLY, JA ;

WILLIAMS, WS .

PHYSICAL REVIEW B, 1978, 17 (04) :1546-1556

[6] VIBRATIONAL PROPERTIES OF CRYSTALLINE AND AMORPHOUS NISI2 [J].

KLOSOWSKI, P ;

LANNIN, JS .

SOLID STATE COMMUNICATIONS, 1989, 72 (09) :927-930

[7] VIBRATIONAL AND RAMAN-SCATTERING PROPERTIES OF CRYSTALLINE GE1-XSIX ALLOYS [J].

LANNIN, JS .

PHYSICAL REVIEW B, 1977, 16 (04) :1510-1518

[8]

LANNIN JS, 1984, SEMICONDUCT SEMIMET, V21, P159

[9]

Li F., 1989, PHYS REV B, V39, P6220

[10] INELASTIC NEUTRON-SCATTERING IN AMORPHOUS FE0.78P0.22 AND CRYSTALLINE FE3P SYSTEMS [J].

LUSTIG, N ;

LANNIN, JS ;

CARPENTER, JM ;

HASEGAWA, R .

PHYSICAL REVIEW B, 1985, 32 (05) :2778-2783

← 1 2 →