DISORDER-INDUCED RAMAN-SCATTERING IN NISI2

被引：28

作者：

LI, F

LUSTIG, N

KLOSOWSKI, P

LANNIN, JS

机构：

[1] Department of Physics, Penn State University, University Park

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.41.10210

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Disorder-induced Raman scattering (DIRS) has been observed in epitaxial films of NiSi2 on (111) Si. The DIRS, which is found to have primarily A-like symmetry, is attributed to Si-site disorder. A comparison with lower-resolution inelastic-neutron-scattering measurements on polycrystalline films suggests that the Raman spectra represent a coupling-parameter-weighted density of states. © 1990 The American Physical Society.

引用

页码：10210 / 10213

页数：4

共 16 条

[11] RAMAN COUPLING-PARAMETER VARIATION IN AMORPHOUS-GERMANIUM [J].