Intrinsic stress dependence of c-axis orientation ratio in PbTiO3 thin films deposited by reactive sputtering

被引:24
作者
Kweon, SY
Yi, SH
Choi, SK
机构
[1] Dept. of Mat. Sci. and Engineering, Korea Adv. Inst. Sci. and Technol., Yusung-gu, Taejon 305-701
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1997年 / 15卷 / 01期
关键词
D O I
10.1116/1.580476
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Highly c-axis oriented lead titanate (PbTiO3) thin film, having a perovskite structure, was prepared on magnesium oxide (MgO) (100) single crystal using multiple cathode dc-magnetron sputtering at 600 degrees C. The film was annealed at 700 degrees C for up to 8 h. Both the c-axis orientation ratio P and c-axis lattice parameter of the film decreased with the increase of the annealing time. It was confirmed that the decrease of the c-axis lattice parameter with the annealing time was due to the relaxation of the intrinsic stress generated during deposition. These experimental results suggested that P was related to the intrinsic stress. The film deposited at various working pressures was examined in detail to confirm the intrinsic stress effect of P. P of 95% at 8 mTorr decreased to 60% at 70 mTorr. The pressure dependence of P was explained by the intrinsic stress change. Regardless of the sputtering condition, all P's were reduced to 40% after annealing at 700 degrees C for 8 h. The difference in P between the before and after annealing was caused by the relaxation of the intrinsic stress. It was supposed that the remaining 40% of P after the heat treatment was caused, in the most part, by the ferroelectric phase transition. (C) 1997 American Vacuum Society.
引用
收藏
页码:57 / 61
页数:5
相关论文
共 20 条
[1]   TWINNING IN FERROELECTRIC AND FERROELASTIC CERAMICS - STRESS RELIEF [J].
ARLT, G .
JOURNAL OF MATERIALS SCIENCE, 1990, 25 (06) :2655-2666
[2]   ORIGIN OF INTRINSIC STRESS IN Y2O3 FILMS DEPOSITED BY REACTIVE SPUTTERING [J].
CHOI, HM ;
CHOI, SK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (06) :2832-2835
[3]   NOTE ON THE ORIGIN OF INTRINSIC STRESSES IN FILMS DEPOSITED VIA EVAPORATION AND SPUTTERING [J].
DHEURLE, FM ;
HARPER, JME .
THIN SOLID FILMS, 1989, 171 (01) :81-92
[4]   SUBSTRATE EFFECTS ON THE STRUCTURE OF EPITAXIAL PBTIO3 THIN-FILMS PREPARED ON MGO, LAALO3, AND SRTIO3 BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].
FOSTER, CM ;
LI, Z ;
BUCKETT, M ;
MILLER, D ;
BALDO, PM ;
REHN, LE ;
BAI, GR ;
GUO, D ;
YOU, H ;
MERKLE, KL .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) :2607-2622
[5]   X-RAY CHARACTERIZATION OF THE DOMAIN-STRUCTURE OF EPITAXIAL LEAD TITANATE THIN-FILMS ON (001)-STRONTIUM-TITANATE [J].
HSU, WY ;
RAJ, R .
APPLIED PHYSICS LETTERS, 1995, 67 (06) :792-794
[6]   PREPARATION OF C-AXIS ORIENTED PBTIO3 THIN-FILMS AND THEIR CRYSTALLOGRAPHIC, DIELECTRIC, AND PYROELECTRIC PROPERTIES [J].
IIJIMA, K ;
TOMITA, Y ;
TAKAYAMA, R ;
UEDA, I .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) :361-367
[7]   DOMAIN FORMATION AND STRAIN RELAXATION IN EPITAXIAL FERROELECTRIC HETEROSTRUCTURES [J].
KWAK, BS ;
ERBIL, A ;
BUDAI, JD ;
CHISHOLM, MF ;
BOATNER, LA ;
WILKENS, BJ .
PHYSICAL REVIEW B, 1994, 49 (21) :14865-14879
[8]   GROWTH OF HIGH-QUALITY SINGLE-DOMAIN SINGLE-CRYSTAL FILMS OF PBTIO3 [J].
LI, Z ;
FOSTER, CM ;
GUO, D ;
ZHANG, H ;
BAI, GR ;
BALDO, PM ;
REHN, LE .
APPLIED PHYSICS LETTERS, 1994, 65 (09) :1106-1108
[9]   CRYSTALLINE-STRUCTURE OF PBTIO3 THIN-FILMS BY MULTIPLE CATHODE SPUTTERING [J].
MAIWA, H ;
ICHINOSE, N ;
OKAZAKI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (9B) :3029-3032
[10]  
OGAWA T, 1993, JPN J APPL PHYS, V32, P4065