Manufacturing of porous silicon;: porosity and thickness dependence on electrolyte composition

被引:30
作者
Kordás, K
Remes, J
Beke, S
Hu, T
Leppävuori, S
机构
[1] Univ Oulu, Microelect & Mat Laser Labs, FIN-90570 Oulu, Finland
[2] Univ Oulu, EMPART Res Grp Infotech Oulu, FIN-90570 Oulu, Finland
[3] Univ Elect Sci & Technol China, Dept Appl Chem, Chengdu 610054, Peoples R China
关键词
porous-materials preparation; electrolysis; semiconductors semiconductor/electrolyte contacts;
D O I
10.1016/S0169-4332(01)00310-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Porous silicon (PS) layers were manufactured by the anodization of silicon (Si) wafers in hydrofluoric acid/ethanol/water (HF/EtOH/H2O) and hydrofluoric acid/surfactant/water (HF/Decon/H2O) electrolytes. Physical parameters such as thickness d) and porosity (p) of the formed PS were determined as the function of concentrations of HF, EtOH, Decon ([HF], [EtOH] and [Decon], respectively). It was found that higher [HF] decreases, while higher [EtOH] increases the porosity and helps to produce both uniform anodization and PS layers. The thickness of the formed PS films were measured by profilometry and prooved to be proportional to [HF] and inversly proportional to [EtOH]. (C) 2001 Elsevier Science B,V. All rights reserved.
引用
收藏
页码:190 / 193
页数:4
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