Performance and reliability of HfAlOx-based interpoly dielectrics for floating-gate Flash memory

被引：17

作者：

Govoreanu, B. ^{[1
]}

Wellekens, D. ^{[1
]}

Haspeslagh, L. ^{[1
]}

Brunco, D. P. ^{[2
]}

De Vos, J. ^{[1
]}

Aguado, D. Ruiz ^{[1
,4
]}

Blomme, P. ^{[1
]}

van der Zanden, K. ^{[3
]}

Van Houdt, J. ^{[1
]}

机构：

[1] IMEC, RDO, PT Div, B-3001 Louvain, Belgium

[2] Intel Corp Assignee, B-3001 Louvain, Belgium

[3] Infineon Technol Assignee, B-3001 Louvain, Belgium

[4] Katholieke Univ Leuven, B-3001 Louvain, Belgium

来源：

SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 04期

关键词：

Flash memory; floating gate; interpoly dielectrics; high-k materials; metal gate; degas; hafnium aluminate; HfAlOx;

D O I：

10.1016/j.sse.2008.01.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses the performance and reliability of aggressively scaled HfAlOx-based interpoly dielectric stacks in combination with high-workfunction metal gates for sub-45 nm non-volatile memory technologies. It is shown that a less than 5 rim EOT IPD stack can provide a large program/erase (P/E) window, while operating at moderate voltages and has very good retention, with an extrapolated 10-year retention window of about 3 V at 150 degrees C. The impact of the process sequence and metal gate material is discussed. The viability of the material is considered in view of the demands of various Flash memory technologies and direction for further improvements are discussed. (c) 2008 Elsevier Ltd. All rights reserved.

引用

页码：557 / 563

页数：7

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