High responsivity AlAs/InAs/GaAs superlattice quantum dot infrared photodetector

被引：16

作者：

Chakrabarti, S ^{[1
]}

Stiff-Roberts, AD

Bhattacharya, PB

Kennerly, SW

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] USA, Res Lab, Sensors & Electron Devices Directorate, Adelphi, MD 20783 USA

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 03期

关键词：

D O I：

10.1049/el:20040136

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of quantum dot infrared photodetectors (QDIPs) in which InAs self-organised quantum dots are embedded in an AlAs/GaAs superlattice matrix are reported. An extremely large peak responsivity, R-p = 2.5 A/W, is measured at T = 78K for V-bias = -1.5 V A dark current density as low as 3.2 x 10(-4) A/cm(2) for V-bias = -2.0 V is also measured at T = 300K.

引用

收藏

页码：197 / 198

页数：2

相关论文

共 9 条

[1] Absorption, carrier lifetime, and gain in InAs-GaAs quantum-dot infrared photodetectors [J].

Kochman, B ;

Stiff-Roberts, AD ;

Chakrabarti, S ;

Phillips, JD ;

Krishna, S ;

Singh, J ;

Bhattacharya, P .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (03) :459-467

[2] Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors [J].

Pan, D ;

Towe, E ;

Kennerly, S .

APPLIED PHYSICS LETTERS, 1998, 73 (14) :1937-1939

[3] Evaluation of the fundamental properties of quantum dot infrared detectors [J].

Phillips, J .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (07) :4590-4594

[4] Self-assembled InAs-GaAs quantum-dot intersubband detectors [J].

Phillips, J ;

Bhattacharya, P ;

Kennerly, SW ;

Beekman, DW ;

Dutta, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (06) :936-943

[5]

Pierz K, 2001, PHYS STATUS SOLIDI B, V224, P119, DOI 10.1002/1521-3951(200103)224:1<119::AID-PSSB119>3.0.CO

[6]

2-W

[7] High-responsivity, normal-incidence long-wave infrared (λ∼7.2 μm) InAs/In0.15Ga0.85As dots-in-a-well detector [J].

Raghavan, S ;

Rotella, P ;

Stintz, A ;

Fuchs, B ;

Krishna, S ;

Morath, C ;

Cardimona, DA ;

Kennerly, SW .

APPLIED PHYSICS LETTERS, 2002, 81 (08) :1369-1371

[8] Energy level engineering in InAs quantum dot nanostructures [J].

Rebohle, L ;

Schrey, FF ;

Hofer, S ;

Strasser, G ;

Unterrainer, K .

APPLIED PHYSICS LETTERS, 2002, 81 (11) :2079-2081

[9] High-detectivity, normal-incidence, mid-infrared (λ∼4 μm)InAs/GaAs quantum-dot detector operating at 150 K [J].

Stiff, AD ;

Krishna, S ;

Bhattacharya, P ;

Kennerly, S .

APPLIED PHYSICS LETTERS, 2001, 79 (03) :421-423