Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors

被引：324

作者：

Pan, D ^{[1
]}

Towe, E

Kennerly, S

机构：

[1] Univ Virginia, Lab Opt & Quantum Elect, Charlottesville, VA 22903 USA

[2] USA, Res Lab, Adelphi, MD 20783 USA

[3] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 14期

关键词：

D O I：

10.1063/1.122328

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the device performance of normal-incidence (In, Ga)As/GaAs quantum dot intersubband infrared photodetectors. A primary intersubband transition peak is observed at the wavelength of 13 mu m (E-0 --> E-1) and a secondary peak at 11 mu m (E-0 --> E-2). The measured energy spacing in the conduction band of the quantum dots is in good agreement with low temperature photoluminescence measurement and calculations. A peak detectivity of 1 x 10(10) cm Hz(1/2)/W at 13 mu m was achieved at 40 K for these devices. (C) 1998 American Institute of Physics. [S0003-6951(98)01440-5].

引用

页码：1937 / 1939

页数：3

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