Far-infrared photoconductivity in self-organized InAs quantum dots

被引：241

作者：

Phillips, J ^{[1
]}

Kamath, K ^{[1
]}

Bhattacharya, P ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 16期

关键词：

D O I：

10.1063/1.121252

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report far-infrared photoconductivity in self-organized InAs/GaAs quantum dots grown by molecular beam epitaxy. Through use of a Fourier transform infrared spectrometer, a photoconductivity signal peaked at 17 mu m is observed from a n-i-n detector structure with doped InAs quantum dots in the intrinsic region. Comparison of photoluminescence and band-to-band photocurrent absorption spectra suggests the far-infrared response is due to intersubband transitions in the quantum dots. (C) 1998 American Institute of Physics.

引用

页码：2020 / 2022

页数：3

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