Strong normal-incidence infrared absorption and photo-current spectra from highly uniform (In,Ga)As/GaAs quantum dot structures

被引：14

作者：

Pan, D ^{[1
]}

Towe, E

Kennerly, S

机构：

[1] Univ Virginia, Lab Opt & Quantum Elect, Charlottesville, VA 22903 USA

[2] USA, Res Lab, Adelphi, MD 20783 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 10期

关键词：

D O I：

10.1049/el:19980589

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report normal-incidence infrared absorption in the wavelength rang 12-14 mu m and low temperature (40K) photocurrent spectra from an (In,Ga)As/GaAs quantum dot structure. The basic structure consists of 20 periods of highly uniform (In,Ga)As/GaAs dot arrays. The strong room temperature absorption indicates the high quality of the superlattice structure; this is considered to be very promising for the fabrication of high performance, long wavelength photodetectors.

引用

页码：1019 / 1020

页数：2

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