Photoluminescence and far-infrared absorption in Si-doped self-organized InAs quantum dots

被引：70

作者：

Phillips, J ^{[1
]}

Kamath, K ^{[1
]}

Zhou, X ^{[1
]}

Chervela, N ^{[1
]}

Bhattacharya, P ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECT LAB,ANN ARBOR,MI 48109

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 15期

关键词：

D O I：

10.1063/1.119347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report far-infrared absorption in directly doped self-organized InAs quantum dots. Photoluminescence spectra demonstrate a blue shift in peak intensity for increasing doping in the quantum dots. Far-infrared absorption measurements using a Fourier transform infrared spectrometer show absorption in the range of 13-18 mu m for quantum dots with Al0.15Ga0.85As and GaAs as the barrier material. (C) 1997 American Institute of Physics.

引用

页码：2079 / 2081

页数：3

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