Nature and Light Dependence of Bulk Recombination in Co-Pi-Catalyzed BiVO4 Photoanodes

BiVO4 is considered to be a promising photoanode material for solar water splitting applications. Its performance is limited by two main factors: slow water oxidation kinetics and poor charge separation. We confirm recent reports that cobalt phosphate (Co-Pi) is an efficient water oxidation catalyst for BiVO4 and report an AM1.5 photocurrent of 1.7 mA/cm(2) at 1.23 V vs RHE for 100 nm spray-deposited, compact, and undoped BiVO4 films with an optimized Co-Pi film thickness of 30 nm. The charge separation of these films depends strongly on light intensity, ranging from 90% at low light intensities to less than 20% at intensities corresponding to 1 sun. These observations indicate that the charge separation efficiency in BiVO4 is limited by poor electron transport and not by the presence of bulk defect states, interface traps, or the presence of a Schottky junction at the back-contact.