A fast measurement technique of MOSFET Id-Vg characteristics

被引：64

作者：

Shen, C

Li, MF ^{[1
]}

Wang, XP

Yeo, YC

Kwong, DL

机构：

[1] Natl Univ Singapore, Silicon Nano Device Lab, Singapore 119260, Singapore

[2] Natl Univ Singapore, Ctr Integrated Circuit Failure Anal, Singapore 119260, Singapore

[3] Natl Univ Singapore, Reliabil Dept Elect & Comp Engn, Singapore 119260, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 01期

关键词：

CMOSFETs; reliability; semiconductor device measurements; trapping;

D O I：

10.1109/LED.2005.861025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we developed an improved ultrafast measurement method for threshold voltage V h measurement of MOSFETs. We demonstrate I-d-V-g curve measurement within 1 mu s to extract the threshold voltage of MOSFET. Errors arising from MOSFET parasitics and measurement setup are analyzed quantatatively. The ultrafast V-th, measurement is highly needed in the investigation of gate dielectric charge trapping effect when traps with short detrapping time constants are present. Application in charge trapping measurement on HfO2 gate dielectric is demonstrated.

引用

页码：55 / 57

页数：3

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