Phase equilibria, defect chemistry and semiconducting properties of CdTe(s) - Thermodynamic modeling

被引:25
作者
Chen, Q [1 ]
Hillert, M
Sundman, B
Oates, WA
Fries, SG
Schmid-Fetzer, R
机构
[1] Royal Inst Technol, Dept Mat Sci & Engn, S-10044 Stockholm, Sweden
[2] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[3] Rhein Westfal TH Aachen, Lehrstuhl Theoret Huttenkunde, D-52054 Aachen, Germany
[4] Tech Univ Clausthal, AG Elekt Mat, D-38678 Clausthal Zellerfeld, Germany
关键词
CdTe; defects; compound energy model; semiconductors; thermodynamic modeling;
D O I
10.1007/s11664-998-0128-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A thermodynamic analysis of the phase equilibria, defect chemistry, and semiconducting properties for CdTe(s) has been established on the basis of the compound energy model. Reported defect density data from a first-principles calculation have been used together with the experimentally measured phase diagram and carrier concentration data in the evaluation of thermodynamic model parameters. The excellent agreement between the various calculated and most of the experimental data indicates that a consistent thermodynamic description for the CdTe(s) phase has been obtained. This is a good illustration of how phase diagram calculations can be used in the refinement of first-principles calculations of defect formation energies.
引用
收藏
页码:961 / 971
页数:11
相关论文
共 37 条
[1]  
ANDERSSON D, 1997, CALPHAD, V21, P265
[2]   A COMPOUND-ENERGY MODEL OF ORDERING IN A PHASE WITH SITES OF DIFFERENT COORDINATION NUMBERS [J].
ANDERSSON, JO ;
GUILLERMET, AF ;
HILLERT, M ;
JANSSON, B ;
SUNDMAN, B .
ACTA METALLURGICA, 1986, 34 (03) :437-445
[3]   A BINARY DATABASE FOR III-V COMPOUND SEMICONDUCTOR SYSTEMS [J].
ANSARA, I ;
CHATILLON, C ;
LUKAS, HL ;
NISHIZAWA, T ;
OHTANI, H ;
ISHIDA, K ;
HILLERT, M ;
SUNDMAN, B ;
ARGENT, BB ;
WATSON, A ;
CHART, TG ;
ANDERSON, T .
CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY, 1994, 18 (02) :177-222
[4]   1ST PRINCIPLES CALCULATION OF NATIVE DEFECT DENSITIES IN HG0.8CD0.2TE [J].
BERDING, MA ;
VANSCHILFGAARDE, M ;
SHER, A .
PHYSICAL REVIEW B, 1994, 50 (03) :1519-1534
[5]   DEFECT MODELING STUDIES IN HGCDTE AND CDTE [J].
BERDING, MA ;
SHER, A ;
VANSCHILFGAARDE, M .
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (09) :1127-1135
[6]  
Blakemore J.S., 1987, SEMICONDUCTOR STAT
[7]  
Bragg WL., 1934, Proc. R. Soc. Lond. A Math. Phys. Sci, V145, P699, DOI DOI 10.1098/RSPA.1934.0132
[8]   CdTe .2. Defect chemistry [J].
Brebrick, RF ;
Fang, R .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1996, 57 (04) :451-460
[9]  
BREBRICK RF, 1969, J SOLID STATE CHEM, V1, P88
[10]   The compound energy model for compound semiconductors [J].
Chen, Q ;
Hillert, M .
JOURNAL OF ALLOYS AND COMPOUNDS, 1996, 245 :125-131