Photo-resist line-edge roughness analysis using scaling concepts

This paper focuses on the problem of obtaining and characterizing the edge roughness of photoresist lines by analyzing top-down Scanning Electron Microscope (SEM) images. An off-line image analysis algorithm detecting the-line edge and an edge roughness characterization scheme, based. on scaling analysis, are briefly described. As a result, it is suggested that apart from the rms value of the edge (sigma); two more roughness parameters are needed: the roughness exponent alpha and the correlation length xi. These characterize the spatial complexity of the edge and determine the dependence of sigma on the length of the measured-edge. Completing our previous work(1-4) on the dependencies of the roughness parameters (sigma,alpha,xi) on various image analysis options, we examine. the effect of the type of noise smoothing filter. Then, a comparative study of the roughness parameters of the left and right edges. of resist lines is conducted, revealing that the sigma values of the right edges are larger than those of left edges whereas the roughness exponents and the correlation lengths do not show such trend.. Finally, the relation between line width roughness and line edge roughness is thoroughly investigated with interesting conclusions.