Metrology method for the correlation of line edge roughness for different resists before and after etch

被引：28

作者：

Winkelmeier, S

Sarstedt, M

Ereken, M

Goethals, M

Ronse, K

机构：

[1] Infineon Technol AG, D-81739 Munich, Germany

[2] IMEC, B-3001 Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2001年 / 57-8卷

关键词：

metrology; line edge roughness; resists; etching;

D O I：

10.1016/S0167-9317(01)00458-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a methodology method to measure line edge roughness (LER) using scanning electron microscopy (SEM) with LER and critical dimension (CD) variation software both for resist lines as well as for silicon lines. The method is based on the spatial frequency of the LER which means that the high- and low-frequency behaviour of LER can be evaluated. As an application, different resists after litho and after polysilicon etch were compared. (C) 2001 Elsevier Science BY All rights reserved.

引用

页码：665 / 672

页数：8

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