Lithography and line-edge roughness of high activation energy resists

被引:24
作者
Masuda, S [1 ]
Ma, X [1 ]
Noya, G [1 ]
Pawlowski, G [1 ]
机构
[1] Clariant Japan KK, BU Elect Mat, Daitocho, Shizuoka 4371496, Japan
来源
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2 | 2000年 / 3999卷
关键词
lithography; line-edge roughness; high activation energy resist; terpolymer; photoacid generator; quencher; process;
D O I
10.1117/12.388309
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Lithographic performance and line-edge roughness (LER) of several experimental high activation energy resists containing hydroxystyrene-co-styrene-co-t-butylmethacrylate terpolymers have been determined as a function of illumination conditions, polymer, photoacid generator and quencher composition, as well as process variations. Important lithographic properties, such as iso/dense bias, exposure latitude, may deteriorate upon minimization of LER. LER is largely affected by the changes of the optical settings, while material and process influences are less pronounced.
引用
收藏
页码:252 / 263
页数:2
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