The mechanism of phenolic polymer dissolution: A new perspective

被引:123
作者
Tsiartas, PC
Flanagin, LW
Henderson, CL
Hinsberg, WD
Sanchez, IC
Bonnecaze, RT
Willson, CG
机构
[1] UNIV TEXAS,DEPT CHEM ENGN,AUSTIN,TX 78712
[2] IBM CORP,ALMADEN RES CTR,SAN JOSE,CA 95126
关键词
D O I
10.1021/ma9707594
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
The function of common, positive tone photoresist materials is based on radiation-induced modulation of the dissolution rate of phenolic polymer films in aqueous base. The process through which novolac and other low molecular weight phenolic polymers undergo dissolution is examined from a new perspective in which the ''average degree of ionization'' of the polymer is regarded as the principal factor that determines the rate of dissolution rather than a diffusive, transport process. This perspective has been coupled with a probabilistic model that provides an explanation for the dependence of the dissolution rate on molecular weight, base concentration, added salts, residual casting solvent, and the addition of ''dissolution inhibitors''. It predicts the observed minimum base concentration below which dissolution is no longer observed, and it predicts a molecular weight dependence of that phenomenon. A series of experiments was designed to test this predicted molecular weight response. The results of these experiments are in good agreement with the predicted response.
引用
收藏
页码:4656 / 4664
页数:9
相关论文
共 38 条
[1]  
Arcus R. A., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V631, P124, DOI 10.1117/12.963634
[2]   ACTIVITY-COEFFICIENTS OF 2=1 ELECTROLYTES IN STRUCTURED AQUEOUS-SOLUTIONS [J].
BAHE, LW ;
PARKER, D .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1975, 97 (20) :5664-5670
[4]   Narrow polydispersity polymers for microlithography: Synthesis and properties [J].
Barclay, GG ;
Hawker, CJ ;
Ito, H ;
Orellana, A ;
Malenfant, PRL ;
Sinta, RF .
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIII, 1996, 2724 :249-260
[5]  
BATCHELDER T, 1983, SOLID STATE TECHNOL, P211
[6]  
BEAUCHEMIN BT, 1994, P SOC PHOTO-OPT INS, V2195, P610, DOI 10.1117/12.175374
[7]  
De Gennes P.-G., 1979, SCALING CONCEPTS POL
[8]   HIGH-PERFORMANCE POSITIVE PHOTORESISTS [J].
FURUTA, A ;
HANABATA, M ;
UEMURA, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :430-436
[9]  
GARDINER AB, IN PRESS P SPIE
[10]   DEEP UV PHOTORESISTS .1. MELDRUMS DIAZO SENSITIZER [J].
GRANT, BD ;
CLECAK, NJ ;
TWIEG, RJ ;
WILLSON, CG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) :1300-1305