Stable 20 W/mm AlGaN-GaN MOSHFET

被引：15

作者：

Simin, G ^{[1
]}

Adivarahan, V ^{[1
]}

Yang, I ^{[1
]}

Koudymov, A ^{[1
]}

Rai, S ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 13期

关键词：

D O I：

10.1049/el:20051203

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first stable operation (> 100 h) of a AlGaN/GaN metal-oxide semiconductor heterostructure field effect transistor (MOSHFET) at very high RF power levels (similar to 20 W/mm at 2 GHz and 55 V drain bias) is reported. These record values are attributed to a current collapse-free performance resulting from using a field-plate over a leaky dielectric, and to the low forward gate currents owing to the MOS-design.

引用

页码：774 / 775

页数：2

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