Transient characteristics of GaN-based heterostructure field-effect transistors

被引：62

作者：

Kohn, E ^{[1
]}

Daumiller, I

Kunze, M

Neuburger, M

Seyboth, M

Jenkins, TJ

Sewell, JS

Van Norstand, J

Smorchkova, Y

Mishra, UK

机构：

[1] Univ Ulm, Dept Electron Devices & Circuits, D-89081 Ulm, Germany

[2] Univ Ulm, Dept Optoelect, D-89081 Ulm, Germany

[3] USAF, Res Lab, Sensor Directorate, Wright Patterson AFB, OH 43240 USA

[4] USAF, Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

[5] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2003年 / 51卷 / 02期

关键词：

GaN; heterostructure field-effect transistors (HFETs); switching experiments; transient analysis;

D O I：

10.1109/TMTT.2002.807687

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

DC current-switching and power-switching transients of various GaN-based FET structures are investigated. Two different characteristics are compared, namely, thermal and electronic transients. While the thermal transients are mainly reflected in changes in channel carrier mobility, the electronic transients are dominated by charge instabilities caused by the polar nature of the material. The discussion of the electronic transients focuses, therefore, on instabilities caused by polarization-induced image charges. Three structures are discussed, which are: 1) a conventional AlGaN/GaN heterostructure FET, 2) an InGaN-channel FET, and 3) an AlGaN/GaN double-barrier structure. In structures 2) and 3), field-induced image charges are substituted by doping impurities, eliminating this source of related instability. This is indeed observed.

引用

页码：634 / 642

页数：9

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