Device characteristics of the GaN/InGaN-doped channel HFETs

被引：15

作者：

Hsin, YM ^{[1
]}

Hsu, HT ^{[1
]}

Chuo, CC ^{[1
]}

Chyi, JI ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli 320, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 11期

关键词：

GaN; HFET; InGaN;

D O I：

10.1109/55.962643

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

First dc, small signal, and RF power characteristics of GaN/InGaN doped-channel heterojunction field effect transistors (HFETs) are reported. HFETs with a 1-mum gate length have demonstrated a maximum drain current of 272 mA/mm, a flat G(m) around 65 mS/mm in a V-GS between -0.65 V and +2.0 V, and an on-state breakdown voltage over 50 V. Complete pinchoff was observed for a -3.5 V gate bias. Devices with a 1-mum gate length have exhibited an f(T) of 8 GHz and f(max) of 20 GHz. A saturated output power of 26 dBm was obtained at 1.9 GHz for a 1 mum x 1 mm device.

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收藏

页码：501 / 503

页数：3

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