Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells

被引：84

作者：

Chuo, CC ^{[1
]}

Lee, CM ^{[1
]}

Chyi, JI ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 03期

关键词：

D O I：

10.1063/1.1339991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal stability of InxGa1-xN/GaN multiple quantum wells with InN mole fraction of similar to0.23 and similar to0.30 was investigated by postgrowth thermal annealing. Low temperature photoluminescence spectroscopy was employed to determine the temperature dependence of the interdiffusion coefficient of In and Ga in InGaN/GaN quantum wells. The interdiffusion process is characterized by a single activation energy of about 3.4 +/-0.5 eV and governed by vacancy-controlled second-nearest-neighbor hopping. Due to composition inhomogeneity, lower diffusivity is observed at the early stage of thermal annealing. (C) 2001 American Institute of Physics.

引用

收藏

页码：314 / 316

页数：3

相关论文

共 19 条

[1] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].

CHIANG, SY ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2986-2991

[2] Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells [J].

Chuo, CC ;

Lee, CM ;

Nee, TE ;

Chyi, JI .

APPLIED PHYSICS LETTERS, 2000, 76 (26) :3902-3904

[3]

CHUO CC, UNPUB

[4]

Crank J., 1957, The Mathematics of Diffusion

[5] Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures [J].

Della Sala, F ;

Di Carlo, A ;

Lugli, P ;

Bernardini, F ;

Fiorentini, V ;

Scholz, R ;

Jancu, JM .

APPLIED PHYSICS LETTERS, 1999, 74 (14) :2002-2004

[6] Effects of macroscopic polarization in III-V nitride multiple quantum wells [J].

Fiorentini, V ;

Bernardini, F ;

Della Sala, F ;

Di Carlo, A ;

Lugli, P .

PHYSICAL REVIEW B, 1999, 60 (12) :8849-8858

[7] INTERDIFFUSION IN INGAAS/GAAS QUANTUM-WELL STRUCTURES AS A FUNCTION OF DEPTH [J].

GILLIN, WP ;

DUNSTAN, DJ ;

HOMEWOOD, KP ;

HOWARD, LK ;

SEALY, BJ .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (08) :3782-3786

[8] Solid phase immiscibility in GaInN [J].

Ho, IH ;

Stringfellow, GB .

APPLIED PHYSICS LETTERS, 1996, 69 (18) :2701-2703

[9] PROPERTIES OF GA VACANCIES IN ALGAAS MATERIALS [J].

KAHEN, KB ;

PETERSON, DL ;

RAJESWARAN, G ;

LAWRENCE, DJ .

APPLIED PHYSICS LETTERS, 1989, 55 (07) :651-653

[10] Effects of rapid thermal annealing on the optical properties of GaNxAs1-x/GaAs single quantum well structure grown by molecular beam epitaxy [J].

Li, LH ;

Pan, Z ;

Zhang, W ;

Lin, YW ;

Zhou, ZQ ;

Wu, RH .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :245-248