Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells

被引：54

作者：

Chuo, CC ^{[1
]}

Lee, CM ^{[1
]}

Nee, TE ^{[1
]}

Chyi, JI ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 26期

关键词：

D O I：

10.1063/1.126815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Postgrowth thermal annealing was applied to investigate the optical and structural properties of InxGa1-xN/GaN multiple quantum wells with high InN mole fraction. Thermal annealing at 900 degrees C results in a twentyfold increase of the integrated photoluminescence intensity. Photoluminescence emission is also improved from a broad band for the as-grown sample to two dominant peaks for the annealed sample. Cross-sectional transmission electron microscopy shows the existence of quantum dot-like islands in the wells for the as-grown sample but these islands are significantly reduced after thermal annealing at 900 degrees C. (C) 2000 American Institute of Physics. [S0003-6951(00)03826-2].

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页码：3902 / 3904

页数：3

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