Interdiffusion of In and Ga in InGaN quantum wells

被引:78
作者
McCluskey, MD
Romano, LT
Krusor, BS
Johnson, NM
Suski, T
Jun, J
机构
[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA
[2] Unipress, PL-01142 Warsaw, Poland
关键词
D O I
10.1063/1.122149
中图分类号
O59 [应用物理学];
学科分类号
摘要
Interdiffusion of In and Ga is observed in InGaN/GaN multiple quantum wells for annealing temperatures of 1300-1400 degrees C. Hydrostatic pressures of up to 15 kbar were applied to prevent surface decomposition. In as-grown material, x-ray diffraction spectra show InGaN diffraction peaks up to the fourth order. After annealing at 1400 degrees C for 15 min, only the zero-order peak is observed, as a result of compositional disordering of the quantum well superlattice. Transmission electron microscopy confirms that the superlattice is completely disordered after annealing at 1400 degrees C for 15 min. (C) 1998 American Institute of Physics. [S0003-6951(98)04635-X].
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页码:1281 / 1283
页数:3
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