共 7 条
Tailoring the birefringence in a vertical-cavity semiconductor laser
被引:56
作者:

vanDoorn, AKJ
论文数: 0 引用数: 0
h-index: 0
机构: Huygens Laboratory, Leiden University, 2300 RA Leiden

vanExter, MP
论文数: 0 引用数: 0
h-index: 0
机构: Huygens Laboratory, Leiden University, 2300 RA Leiden

Woerdman, JP
论文数: 0 引用数: 0
h-index: 0
机构: Huygens Laboratory, Leiden University, 2300 RA Leiden
机构:
[1] Huygens Laboratory, Leiden University, 2300 RA Leiden
关键词:
D O I:
10.1063/1.117007
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
We demonstrate a technique to modify the strain in a planar vertical-cavity semiconductor laser. The technique consists of locally melting a hole in the wafer next to the device by means of a focused laser beam. This allows manipulating both the magnitude and the orientation of the native birefringence in a permanent way. (C) 1996 American Institute of Physics.
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页码:3635 / 3637
页数:3
相关论文
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SAITO, H
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KASAHARA, K
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vanExter, MP
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机构: Huygens Laboratory, Leiden University, 2300 RA Leiden

Woerdman, JP
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