Tailoring the birefringence in a vertical-cavity semiconductor laser

被引:56
作者
vanDoorn, AKJ
vanExter, MP
Woerdman, JP
机构
[1] Huygens Laboratory, Leiden University, 2300 RA Leiden
关键词
D O I
10.1063/1.117007
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate a technique to modify the strain in a planar vertical-cavity semiconductor laser. The technique consists of locally melting a hole in the wafer next to the device by means of a focused laser beam. This allows manipulating both the magnitude and the orientation of the native birefringence in a permanent way. (C) 1996 American Institute of Physics.
引用
收藏
页码:3635 / 3637
页数:3
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