A new process for the development of hard and stable sputtered amorphous carbon films

被引：15

作者：

Logothetidis, S ^{[1
]}

Gioti, M ^{[1
]}

Charitidis, C ^{[1
]}

Patsalas, P ^{[1
]}

机构：

[1] Aristotelian Univ Salonika, Dept Phys, Solid State Phys Sect, GR-54006 Salonika, Greece

来源：

VACUUM | 1999年 / 53卷 / 1-2期

关键词：

amorphous carbon films; ellipsometry; sputtering; stress; X-ray reflectivity;

D O I：

10.1016/S0042-207X(98)00392-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have developed a new process for building up thick and stable amorphous carbon films (a-C) rich in sp(3) bonds with high hardness and controllable values of internal stress. The films were prepared by rf magnetron sputtering in multilayers (sequential thin layers with alternating positive and negative substrate bias voltage, V-b). Detailed analysis of in situ spectroscopic ellipsometry data, obtained in the energy range 1.5-5.5 eV, based on different models and the study of density and stress within the individual layers, provide valuable information about the growth and stress relaxation mechanisms in these systems. In addition, nanoindentation measurements show an improvement in the elastic properties of the multilayered a-C films compared with the a-C films developed solely with negative V-b(rich in sp(3) bonds). In view of the obtained results, possible explanations on the origin of the stress relaxation and the enhancement of the elastic properties in multilayer a-C films are proposed and discussed. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：61 / 65

页数：5

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