Kelvin force microscopy on diamond surfaces and devices

被引：43

作者：

Rezek, B ^{[1
]}

Nebel, CE ^{[1
]}

机构：

[1] AIST, Diamond Res Ctr, Tsukuba, Ibaraki 3058568, Japan

来源：

DIAMOND AND RELATED MATERIALS | 2005年 / 14卷 / 3-7期

关键词：

diamond crystal; surface microscopy; surface electronic properties; homoepitaxy;

D O I：

10.1016/j.diamond.2005.01.041

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results, resolution and accuracy of Kelvin force microscopy (KFM) on highly conductive (hydrogenated) and highly resistive (oxidized) diamond surfaces are discussed in detail. Electronic properties of the interface between hydrogen and oxygen terminated surface regions are investigated using KFM profiles across in-plane gate transistor structures. Measurements under sub-band gap illumination are interpreted in terms of a surface photovoltage effect and are used to deduce information about surface and interface states. (c) 2005 Elsevier B.V. All rights reserved.

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页码：466 / 469

页数：4

相关论文

共 20 条

[1] Low-threshold electron emission from diamond [J].

Cui, JB ;

Ristein, J ;

Ley, L .

PHYSICAL REVIEW B, 1999, 60 (23) :16135-16142

[2] Electron affinity of the bare and hydrogen covered single crystal diamond (111) surface [J].

Cui, JB ;

Ristein, J ;

Ley, L .

PHYSICAL REVIEW LETTERS, 1998, 81 (02) :429-432

[3] Novel in-plane gate devices on hydrogenated diamond surfaces [J].

Garrido, JA ;

Nebel, CE ;

Todt, R ;

Amann, MC ;

Williams, OA ;

Jackman, R ;

Nesládek, M ;

Stutzmann, M .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 199 (01) :56-63

[4] Electrostatic force microscopy: principles and some applications to semiconductors [J].

Girard, P .

NANOTECHNOLOGY, 2001, 12 (04) :485-490

[5] Resolution and contrast in Kelvin probe force microscopy [J].

Jacobs, HO ;

Leuchtmann, P ;

Homan, OJ ;

Stemmer, A .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (03) :1168-1173

[6] Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering [J].

Kronik, L ;

Shapira, Y .

SURFACE AND INTERFACE ANALYSIS, 2001, 31 (10) :954-965

[7] RESISTIVITY OF CHEMICAL VAPOR-DEPOSITED DIAMOND FILMS [J].

LANDSTRASS, MI ;

RAVI, KV .

APPLIED PHYSICS LETTERS, 1989, 55 (10) :975-977

[8] Origin of surface conductivity in diamond [J].

Maier, F ;

Riedel, M ;

Mantel, B ;

Ristein, J ;

Ley, L .

PHYSICAL REVIEW LETTERS, 2000, 85 (16) :3472-3475

[9] KELVIN PROBE FORCE MICROSCOPY [J].

NONNENMACHER, M ;

OBOYLE, MP ;

WICKRAMASINGHE, HK .

APPLIED PHYSICS LETTERS, 1991, 58 (25) :2921-2923

[10] Hydrogenated diamond surfaces studied by atomic and Kelvin force microscopy [J].

Rezek, B ;

Nebel, CE ;

Stutzmann, M .

DIAMOND AND RELATED MATERIALS, 2004, 13 (4-8) :740-745