Understanding and eliminating defects in electroplated Cu films

被引：20

作者：

Lu, JP ^{[1
]}

Chen, L ^{[1
]}

Gonzalez, D ^{[1
]}

Guo, HL ^{[1
]}

Rose, DJ ^{[1
]}

Marudachalam, M ^{[1
]}

Hsu, WY ^{[1
]}

Liu, HY ^{[1
]}

Cataldi, F ^{[1
]}

Chatterjee, B ^{[1
]}

Smith, PB ^{[1
]}

Holverson, P ^{[1
]}

Guldi, RL ^{[1
]}

Russell, NM ^{[1
]}

Shinn, G ^{[1
]}

Zuhoski, S ^{[1
]}

Luttmer, JD ^{[1
]}

机构：

[1] Texas Instruments Inc, Silicon Technol Dev, Dallas, TX 75243 USA

来源：

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2001年

关键词：

D O I：

10.1109/IITC.2001.930084

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

Electrochemical deposition (ECD) is currently the only practical process for manufacturing copper (Cu) interconnections on silicon integrated circuits. However, this application is relatively new and some issues related to ECD defects remain to be resolved. One of the most important types of ECD defects consists of voids clustered together to form curved lines, referred to as "swift defects". The swirl defect is a common phenomenon in ECD and is often associated with aged seed. Control experiments aimed in understanding the origin of this defect will be discussed in this paper. A novel method to eliminate the defect will also be presented.

引用

页码：280 / 282

页数：3