Annealing effects on irradiated n+n silicon detectors

被引：12

作者：

Allport, PP ^{[1
]}

Booth, PSL ^{[1
]}

Green, C ^{[1
]}

Greenall, A ^{[1
]}

Jackson, JN ^{[1
]}

Jones, TJ ^{[1
]}

Richardson, JD ^{[1
]}

Garcia, SMI ^{[1
]}

Smith, NA ^{[1
]}

Turner, PR ^{[1
]}

Wormald, MP ^{[1
]}

机构：

[1] Univ Liverpool, Liverpool L69 7ZE, Merseyside, England

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 420卷 / 03期

关键词：

D O I：

10.1016/S0168-9002(98)01202-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The performance of ATLAS forward region full-sized n(+)n prototype silicon micro-strip detectors has been studied after irradiation with 2 x 10(14) protons/cm(2) and 52 days annealing at 20 degrees C. The signal-to-noise ratio measured at - 10 degrees C with LHC speed read-out was found to be degraded primarily due to increased noise. The reduction in the reverse current and the changes in the voltage needed for maximum charge collection have both been studied as a function of annealing time. Above the depletion voltage, no effect on the charge collection efficiency has been observed during this annealing period. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：473 / 480

页数：8

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