Synthesis and characterization of the first liquid single-source precursors for the deposition of ternary chalcopyrite (CuInS2) thin film materials

被引:66
作者
Banger, KK
Cowen, J
Hepp, AF [1 ]
机构
[1] NASA, Glenn Res Ctr, Photovolta & Space Environm Branch, Cleveland, OH 44135 USA
[2] Ohio Aerosp Inst, Cleveland, OH 44142 USA
[3] Cleveland State Univ, Dept Chem, Cleveland, OH 44115 USA
关键词
D O I
10.1021/cm010507o
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Molecular engineering of ternary single-source precursors based on the [{PBu3}(2)Cu(SR')(2)In-(SR')(2)] architecture have afforded the first liquid CIS ternary single-source precursors (when R = Et, n-Pr), which are suitable for low-temperature deposition (< 350 degreesC). Thermogravimetric analyses (TGA) and modulated DSC confirm their liquid phase and reduced stability. X-ray diffraction studies, EDS, and SEM support the formation of the single-phase chalcopyrite CuInS2 at low temperatures.
引用
收藏
页码:3827 / +
页数:4
相关论文
共 24 条
[1]  
BANGER KK, 2001, E MRS SPRING M S P T
[2]  
BANGER KK, 2001, 222 ACS NAT M CHIC I
[3]   Low cost techniques for the preparation of Cu(In,Ga)(Se,S)2 absorber layers [J].
Basol, BM .
THIN SOLID FILMS, 2000, 361 :514-519
[4]  
Brisdon A.K., 1998, INORGANIC SPECTROSCO
[5]  
Contreras MA, 1999, PROG PHOTOVOLTAICS, V7, P311, DOI 10.1002/(SICI)1099-159X(199907/08)7:4<311::AID-PIP274>3.0.CO
[6]  
2-G
[7]  
COWEN J, 2001, NATAS C SESS THERM A
[8]   Using single source precursors and spray chemical vapor deposition to grow thin-film CuIns2 [J].
Harris, JD ;
Hehemann, DG ;
Cowen, JE ;
Hepp, AF ;
Raffaelle, RP ;
Hollingsworth, JA .
CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, :563-566
[9]   SYNTHESIS OF MIXED COPPER INDIUM CHALCOGENOLATES - SINGLE-SOURCE PRECURSORS FOR THE PHOTOVOLTAIC MATERIALS CUINQ2 (Q=S, SE) [J].
HIRPO, W ;
DHINGRA, S ;
SUTORIK, AC ;
KANATZIDIS, MG .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1993, 115 (04) :1597-1599
[10]  
Hollingsworth JA, 1999, CHEM VAPOR DEPOS, V5, P105, DOI 10.1002/(SICI)1521-3862(199906)5:3<105::AID-CVDE105>3.0.CO