Gallium arsenide for vertex detectors

被引：10

作者：

DAuria, S

Bates, R

DaVia, C

delPapa, C

Gowdy, S

OShea, V

Raine, C

Smith, K

机构：

[1] IST NAZL FIS NUCL, GRP COLLEGATO UDINE, UDINE, ITALY

[2] UNIV GLASGOW, DEPT PHYS & ASTRON, GLASGOW, LANARK, SCOTLAND

[3] UNIV UDINE, DIPARTIMENTO FIS, I-33100 UDINE, ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1997年 / 386卷 / 01期

关键词：

D O I：

10.1016/S0168-9002(97)87399-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We give an overview of recent results in the development of GaAs detectors: they now have 100% charge collection efficiency with good reliability; they are bond-compatible with silicon detectors, with both strip and pixel geometry. New results on pixel detectors are reported as well as a short summary on the radiation hardness of SIU-GaAs detectors.

引用

页码：177 / 185

页数：9

共 30 条

[21]

MANOLOPOULOS S, 1996, 4 INT WORKSH GAAS DE

[22]

MAYER JW, 1962, NUCLEONICS, V20, P60

[23] PRESENT STATUS OF UNDOPED SEMIINSULATING LEC BULK GAAS AS A RADIATION SPECTROMETER [J].

MCGREGOR, DS ;

ROJESKI, RA ;

KNOLL, GF ;

TERRY, FL ;

EAST, J ;

EISEN, Y .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1994, 343 (2-3) :527-538

[24] Performances of SI GaAs detectors fabricated with implanted ohmic contacts. [J].

Nava, F ;

Alietti, M ;

Canali, C ;

Cavallini, A ;

Chiossi, C ;

delPapa, C ;

Re, V ;

Lanzieri, C .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (03) :1130-1136

[25]

*RD8 COLL, 1994, 9432 CERNDRDC RD8 CO

[26]

RENTE C, 1996, INT C RAD EFF SEM MA

[27]

SELLIN PJ, 1995, P 3 INT WORKSH GAAS, P41

[28]

SMITH K, 1990, 9010 CERN, V3

[29]

TOPOROWSKI M, 1996, 4 INT WORKSH GAAS DE

[30]

WEBER ER, 1996, 4 INT WORKSH GAAS DE

← 1 2 3 →