In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates

被引：8

作者：

Xu, HZ ^{[1
]}

Zhou, W ^{[1
]}

Xu, B ^{[1
]}

Jiang, WH ^{[1
]}

Gong, Q ^{[1
]}

Ding, D ^{[1
]}

Wang, ZG ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 1999年 / 141卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

quantum dot array; InxGa1-xAs self-assembly; molecular beam epitaxy; GaAs (311)B; high-index; surface structure;

D O I：

10.1016/S0169-4332(98)00605-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Self-assembled InxGa1-xAs quantum dots (QDs) on (311)A/B GaAs surfaces have been grown by molecular beam epitaxy (MBE). Spontaneously ordering alignment of InxGa1-xAs with lower In content around 0.3 have been observed. The direction of alignment orientation of the QDs formation differs from the direction of misorientation of the (311)B surface, and is strongly dependent upon the In content x. The ordering alignment become significantly deteriorated as the In content is increased to above 0.5 or as the QDs are formed on (100) or (311)A substrates. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：101 / 106

页数：6

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