Planar faults in layered Bi-containing perovskites studied by X-ray diffraction line profile analysis

被引：8

作者：

Boulle, A

Legrand, C

Guinebretière, R

Mercurio, JP

Dauger, A

机构：

[1] ENSCI, UMR 6638, F-87065 Limoges, France

[2] Fac Sci, UMR 6638, F-87060 Limoges, France

来源：

JOURNAL OF APPLIED CRYSTALLOGRAPHY | 2001年 / 34卷

关键词：

D O I：

10.1107/S0021889801011700

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Profile fitting procedures associated with integral breadth studies and Fourier analysis are applied to the study of the complex Bi-containing layered perovskite SrBi2Nb2O9. Strong line broadening anisotropy is evidenced. Both 'size' and 'strain' effects contribute to the observed width. However, 'size' broadening along the [00l] direction is essentially caused by stacking faults. The coherently diffracting domain sizes are deduced from Fourier analysis of the diffraction patterns and a rough estimate of the mean distance between faults is given. Thermal annealing significantly decreases the stacking fault density.

引用

收藏

页码：699 / 703

页数：5

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