Si-SiO2 interface trap capture properties

The Si-SiO2 interface trap capture properties are studied using a charge pumping (CP) derived technique in which the CP current is measured as a function of the capture time constant. The distribution obtained is interpreted either assuming carrier pure tunneling into oxide traps or thermally activated capture. Starting from short to long time constants, both trap profiles are composed of an exponential region followed by a plateau. In the exponential region, the results support a thermally activated capture mechanism. In the plateau region, the tunneling model better agrees with the results but a slight temperature dependence of the trap density is observed. (C) 2001 Elsevier Science B.V. All rights reserved.