Influence of substrate temperature on damage buildup and removal of ion implanted gallium nitride

被引：17

作者：

Liu, C ^{[1
]}

Wenzel, A

Volz, K

Rauschenbach, B

机构：

[1] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

[2] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 148卷 / 1-4期

关键词：

Ca/Mg ion implantation; GaN; rapid thermal annealing; defect;

D O I：

10.1016/S0168-583X(98)00691-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Ca+ and Mg+ ions were homogeneously implanted in GaN in a dose range between 5x10(12) and 7.3x10(16) cm(-2) at a variety of substrate temperatures from liquid nitrogen temperature to 500 degrees C. The implantation energies were 180 keV for Ca+ and 90 keV for Mg+ implantation, respectively. The structural properties of the implanted film before and after rapid thermal annealing (RTA) at 1150 degrees C in flowing N-2 were studied by Rutherford backscattering/channeling (RBS/C). X-ray diffraction (XRD). and cross-sectional transmission electron microscopy. The damage buildup and removal was quantitatively assessed. Significant decomposition of GaN has been observed during RTA 1150 degrees C under flowing N-2 even though for the very short time of 15 s. Lattice expansion due to implantation doping was found and its dependence on ion dose and substrate temperature has been determined. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：396 / 400

页数：5

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