ION-IMPLANTATION DOPING AND ISOLATION OF GAN

N- and p-type regions have been produced in GaN using Si+ and Mg+/P+ implantation, respectively, and subsequent annealing at similar to 1100 degrees C. Carrier activation percentages of 93% for Si and 62% for Mg were obtained for implant doses of 5 x 10(14) cm (-2) of each element. Conversely, highly resistive regions (>5 X 10(9) Omega/rectangle) can be produced in initially n- or p- type GaN by Nf implantation and subsequent annealing at similar to 750 degrees C. The activation energy of the deep states controlling the resistivity of these implant-isolated materials is in the range 0.8-0.9 eV. These process modules are applicable to the fabrication of a variety of different GaN-based electronic and photonic devices. (C) 1995 American Institute of Physics.