Parallel scanning AFM with on-chip circuitry in CMOS technology

被引：25

作者：

Lange, D ^{[1
]}

Akiyama, T ^{[1
]}

Hagleitner, C ^{[1
]}

Tonin, A ^{[1
]}

Hidber, HR ^{[1
]}

Niedermann, P ^{[1
]}

Staufer, U ^{[1
]}

de Rooij, NF ^{[1
]}

Brand, O ^{[1
]}

Baltes, H ^{[1
]}

机构：

[1] ETH Honggerberg, Phys Elect Lab, CH-8093 Zurich, Switzerland

来源：

MEMS '99: TWELFTH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 1999年

关键词：

D O I：

10.1109/MEMSYS.1999.746870

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

We present the first force sensors for application in Atomic Force Microscopy (AFM) fabricated with industrial CMOS technology. Sensing is based on two different detection schemes: a piezoresistive Wheatstone bridge and stress-sensing MOS transistors. The system combines on a single chip (i) two cantilevers for parallel scanning, (ii) thermal actuators for independent deflection of the two cantilevers, (iii) sensors to measure the deflection, and (iv) offset compensation and signal conditioning circuitry. The AFM probes were tested in contact and dynamic mode. In the dynamic mode, images with a resolution of better than 20 Angstrom, were recorded. Moreover, we successfully took parallel scanning images in contact, mode.

引用

页码：447 / 452

页数：6

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