Micromachined thermally based CMOS microsensors

被引:213
作者
Baltes, H [1 ]
Paul, O
Brand, O
机构
[1] Swiss Fed Inst Technol, Dept Phys Elect, CH-8093 Zurich, Switzerland
[2] Univ Freiburg, Inst Microsyst Technol, D-79110 Freiburg, Germany
关键词
chemical sensor; CMOS microsensors; flow sensor; heat capacity; infrared sensor; micromachining; position sensor; pressure sensor; Seebeck coefficient; thermal conductivity; thermal converter; thermal sensor; thermopile;
D O I
10.1109/5.704271
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An integrated circuit (IC) approach to thermal microsensors is presented. The focus is on thermal sensors with on-chip bias and signal conditioning circuits made by industrial complementary metal-oxide-semiconductor (CMOS) IC technology in combination with post-CMOS micromachining or deposition techniques. CMOS materials and physical effects pertinent to thermal sensors are summarized together with basic structures used for microheaters, thermistors, thermocouples, thermal isolation, and heat sinks. As examples of sensors using temperature measurement, we present micromachined CMOS radiation sensors and thermal converters. Examples for sensors based on thermal actuation include thermal flow and pressure sensors, as well as thermally excited microresonators for position and chemical sensing. We also address sensors for the characterization of process-dependent thermal properties of CMOS materials, such as thermal conductivity, Seebeck coefficient, and heat capacity, whose knowledge is indispensable for thermal sensor design. Last, two complete, packaged microsystems-a thermoelectric air-flow sensor and a thermoelectric infrared intrusion detector-are reported as demonstrators.
引用
收藏
页码:1660 / 1678
页数:19
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