Structure of cubic polytype indium nitride layers on top of modified sapphire substrates

被引：2

作者：

Morales, F. M. ^{[1
]}

Lozano, J. G. ^{[1
]}

Garcia, R. ^{[1
]}

Lebedev, V. ^{[2
]}

Wang, Ch. Y. ^{[2
]}

Cimalla, V. ^{[2
]}

Ambacher, O. ^{[2
]}

Gonzalez, D. ^{[1
]}

机构：

[1] Univ Cadiz, Dept Ciencia Mat & Ingn Met & QI, Cadiz 11510, Spain

[2] Tech Univ Ilmenau, Inst Micro & Nanotechnol, D-98684 Ilmenau, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 2 2008 | 2008年 / 5卷 / 02期

关键词：

D O I：

10.1002/pssc.200777472

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The occurrence of cubic indium nitride thin layers grown by molecular beam epitaxy on top of c-plane sapphire substrates modified by an intermediate layer of cubic indium oxide is reported. An orientation relationship between the (0001) plane of Al2O3 and both (001) surfaces of body-centered cubic In2O3 and zinc-blende InN is demonstrated by means of electron and X-ray diffraction and by transmission electron microscopy. We propose that the demonstrated approach is able to stabilize the non equilibrium phase of InN (i. e., the cubic polytype) due to a low lattice mismatch together with a four fold surface atomic arrangement of the indium oxide-indium nitride interface. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：514 / +

页数：2

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