InN, latest development and a review of the band-gap controversy

被引：171

作者：

Butcher, KSA ^{[1
]}

Tansley, TL ^{[1
]}

机构：

[1] Macquarie Univ, Dept Phys, N Ryde, NSW 2109, Australia

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2005年 / 38卷 / 01期

基金：

澳大利亚研究理事会;

关键词：

indium nitride; band-gap; oxygen; alloy; absorption; photoluminescence;

D O I：

10.1016/j.spmi.2005.03.004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Following a short history of its development, the latest advances in the physics of InN and the arguments surrounding the band-gap controversy are critically reviewed. The role of oxygen in the material is examined, with new absorption data presented for the amorphous oxynitride contribution. Assumptions regarding oxygen alloying are dispelled. The recent evidence for a 1.1-1.5 eV band-gap is examined, as well as evidence for the possibility of a similar to 0.7 eV trapping centre. Data for the newly discovered nitrogen:InN alloy system, extending out to levels of 33% excess nitrogen, are discussed, as are current techniques for stoichiometry analysis. Finally it is concluded that the current analysis of InN is not yet sufficient to ascribe a known band-gap to the material. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1 / 37

页数：37

共 164 条

[1] Absorption and photoluminescence features caused by defects in InN [J].

Alexandrov, D ;

Butcher, KSA ;

Wintrebert-Fouquet, M .

JOURNAL OF CRYSTAL GROWTH, 2004, 269 (01) :77-86

[2] Energy band gaps of InN containing oxygen and of the InxAI1-xN interface layer formed during InN film growth [J].

Alexandrov, D ;

Scott, K ;

Butcher, A ;

Wintrebert-Fouquet, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (03) :954-961

[3] Structural and optical properties of indium nitride grown by plasma assisted molecular beam epitaxy [J].

Anderson, PA ;

Lee, TE ;

Kendrick, CE ;

Diehl, W ;

Kinsey, RJ ;

Kennedy, VJ ;

Markwitz, A ;

Reeves, RJ ;

Durbin, SM .

PHOTONICS: DESIGN, TECHNOLOGY, AND PACKAGING, 2004, 5277 :90-98

[4] Temperature dependent transport properties in GaN, A1xGa1-xN, and InxGa1-xN semiconductors [J].

Anwar, AFM ;

Wu, SL ;

Webster, RT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :567-572

[5] Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels [J].

Arnaudov, B ;

Paskova, T ;

Paskov, PP ;

Magnusson, B ;

Valcheva, E ;

Monemar, B ;

Lu, H ;

Schaff, WJ ;

Amano, H ;

Akasaki, I .

PHYSICAL REVIEW B, 2004, 69 (11)

[6] Do we know the fundamental energy gap of InN? [J].

Bechstedt, F ;

Furthmüller, J .

JOURNAL OF CRYSTAL GROWTH, 2002, 246 (3-4) :315-319

[7] Photoluminescence study of deep levels in Cr-doped ZnSe [J].

Bhaskar, S ;

Dobal, PS ;

Rai, BK ;

Katiyar, RS ;

Bist, HD ;

Ndap, JO ;

Burger, A .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) :439-443

[8] Indium nitride (InN): A review on growth, characterization, and properties [J].

Bhuiyan, AG ;

Hashimoto, A ;

Yamamoto, A .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) :2779-2808

[9] Enhanced third-order nonlinearity in semiconductors giving rise to 1 THz radiation [J].

Brazis, R ;

Raguotis, R ;

Moreau, P ;

Siegrist, MR .

INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 2000, 21 (04) :593-602

[10] Absorption and Raman scattering processes in InN films and dots [J].

Briot, O ;

Maleyre, B ;

Ruffenach, S ;

Gil, B ;

Pinquier, C ;

Demangeot, F ;

Frandon, J .

JOURNAL OF CRYSTAL GROWTH, 2004, 269 (01) :22-28

← 1 2 3 4 5 6 7 8 9 10 →