InN, latest development and a review of the band-gap controversy

被引：171

作者：

Butcher, KSA ^{[1
]}

Tansley, TL ^{[1
]}

机构：

[1] Macquarie Univ, Dept Phys, N Ryde, NSW 2109, Australia

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2005年 / 38卷 / 01期

基金：

澳大利亚研究理事会;

关键词：

indium nitride; band-gap; oxygen; alloy; absorption; photoluminescence;

D O I：

10.1016/j.spmi.2005.03.004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Following a short history of its development, the latest advances in the physics of InN and the arguments surrounding the band-gap controversy are critically reviewed. The role of oxygen in the material is examined, with new absorption data presented for the amorphous oxynitride contribution. Assumptions regarding oxygen alloying are dispelled. The recent evidence for a 1.1-1.5 eV band-gap is examined, as well as evidence for the possibility of a similar to 0.7 eV trapping centre. Data for the newly discovered nitrogen:InN alloy system, extending out to levels of 33% excess nitrogen, are discussed, as are current techniques for stoichiometry analysis. Finally it is concluded that the current analysis of InN is not yet sufficient to ascribe a known band-gap to the material. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1 / 37

页数：37

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