Detailed analysis of absorption data for indium nitride

被引:20
作者
Butcher, KSA [1 ]
Wintrebert-Fouquet, M
Chen, PPT
Timmers, H
Shrestha, SK
机构
[1] Macquarie Univ, Dept Phys, Semicond Sci & Technol Labs, Sydney, NSW 2109, Australia
[2] Univ New S Wales, Australian Def Force Acad, Sch Phys, Canberra, ACT 2600, Australia
[3] Australian Natl Univ, Dept Phys Nucl, Canberra, ACT 0200, Australia
关键词
deep level traps; indium nitride; absorption; band gap;
D O I
10.1016/j.mssp.2003.07.004
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
It is shown that the 0.7 eV band gap recently announced for InN is actually due to a sub band gap deep level trap with \s> like symmetry. This level had been known in the literature, but was previously misinterpreted as a deep level trap with \p> like symmetry. It is also shown that proper interpretation of the absorption data for InN requires that the energy dependence of the refractive index be taken into account. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:351 / 354
页数:4
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