INFRARED-ABSORPTION IN INDIUM NITRIDE

被引:47
作者
TANSLEY, TL
FOLEY, CP
机构
关键词
D O I
10.1063/1.337213
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2092 / 2095
页数:4
相关论文
共 11 条
[1]   MORPHOLOGY AND STRUCTURE OF INDIUM NITRIDE FILMS [J].
FOLEY, CP ;
TANSLEY, TL .
APPLICATIONS OF SURFACE SCIENCE, 1985, 22-3 (MAY) :663-669
[2]   PSEUDOPOTENTIAL BAND-STRUCTURE OF INDIUM NITRIDE [J].
FOLEY, CP ;
TANSLEY, TL .
PHYSICAL REVIEW B, 1986, 33 (02) :1430-1433
[3]   ELECTRICAL AND OPTICAL PROPERTIES OF RF-SPUTTERED GAN AND INN [J].
HOVEL, HJ ;
CUOMO, JJ .
APPLIED PHYSICS LETTERS, 1972, 20 (02) :71-&
[4]   INFRARED ABSORPTION OF INDIUM ANTIMONIDE [J].
KAISER, W ;
FAN, HY .
PHYSICAL REVIEW, 1955, 98 (04) :966-968
[5]   ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J].
Lucovsky, G. .
SOLID STATE COMMUNICATIONS, 1965, 3 (09) :299-302
[6]   PROPERTIES OF ZN-DOPED GAN .1. PHOTOLUMINESCENCE [J].
PANKOVE, JI ;
BERKEYHE.JE ;
MILLER, EA .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1280-1286
[7]  
RIDLEY BK, 1982, QUANTUM PROCESSES SE, pCH5
[8]  
Tansley T. L., 1984, Semi-Insulating III-V materials, P497
[9]   ELECTRON-MOBILITY IN INDIUM NITRIDE [J].
TANSLEY, TL ;
FOLEY, CP .
ELECTRONICS LETTERS, 1984, 20 (25-2) :1066-1068
[10]   OPTICAL BAND-GAP OF INDIUM NITRIDE [J].
TANSLEY, TL ;
FOLEY, CP .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) :3241-3244