THE EFFECT OF THIN FILM/SUBSTRATE RADII ON THE STONEY FORMULA FOR THIN FILM/SUBSTRATE SUBJECTED TO NONUNIFORM AXISYMMETRIC MISFIT STRAIN AND TEMPERATURE

被引：41

作者：

Feng, Xue ^{[1
]}

Huang, Yonggang ^{[1
]}

Jiang, Hanqing ^{[2
]}

Ngo, Duc ^{[1
]}

Rosakis, Ares J. ^{[3
]}

机构：

[1] Univ Illinois, Dept Mech & Ind Engn, Urbana, IL 61801 USA

[2] Arizona State Univ, Dept Mech & Aerosp Engn, Tempe, AZ 85287 USA

[3] CALTECH, Grad Aeronaut Lab, Pasadena, CA 91125 USA

来源：

JOURNAL OF MECHANICS OF MATERIALS AND STRUCTURES | 2006年 / 1卷 / 06期

关键词：

thin film radius; nonuniform misfit strain; nonuniform wafer curvatures; stress-curvature relations; nonlocal effects; interfacial shears;

D O I：

10.2140/jomms.2006.1.1041

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Current methodologies used for the inference of thin film stress through curvature measurements are strictly restricted to stress and curvature states which are assumed to remain uniform over the entire film/substrate system. There are recent studies of film/substrate systems subjected to nonuniform but axisymmetric misfit strain and temperature changes. The film stresses were found to depend nonlocally on system curvatures (that is, depend on the full-field curvatures). A very simple stress-curvature relation was established, but it is limited to thin film and substrate of same radius. We extend the analysis to thin film and substrate of different radii. Remarkably the same simple stress-curvature relation still holds regardless of the film/substrate radii mismatch.

引用

页码：1041 / 1053

页数：13

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