High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors

被引：30

作者：

Huo, X ^{[1
]}

Zhang, M ^{[1
]}

Chan, PCH ^{[1
]}

Liang, Q ^{[1
]}

Tang, ZK ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept EEE, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419263

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High frequency S parameters characterization up to 10 GHz for back-gate Carbon Nanotube Field-Effect Transistors (CNFETs) was carried for the first time. The high frequency transmission properties of back-gate CNFETs were compared and analyzed at different gate bias voltages using a lumped element model.

引用

页码：691 / 694

页数：4