High-frequency response in carbon nanotube field-effect transistors

被引：41

作者：

Frank, DJ ^{[1
]}

Appenzeller, J ^{[1
]}

机构：

[1] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 01期

关键词：

carbon nanotube; field-effect transistor; high frequency response;

D O I：

10.1109/LED.2003.821589

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report electrical measurements of the radio frequency response of carbon nanotube field-effect transistors (CNFETs). The very low current drive of CNFETs makes conventional high-frequency measurements difficult. To overcome this problem, we have used a novel approach to easily measure the response up to 250 MHz in nonoptimized experimental conditions. We observe a clear response of our CNFETs with no deterioration in signal up to at least 250 MHz, which is the limit for our present configuration.

引用

页码：34 / 36

页数：3

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