The edge ultraviolet luminescence of GaN:Zn films activated in a nitrogen plasma

被引：2

作者：

Georgobiani, AN

Gruzintsev, AN

Aminov, UA

Vorob'ev, MO

Khodos, II

机构：

[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 117924, Russia

[2] Russian Acad Sci, Inst Microelect Technol & Ultrahigh Pur Mat, Chernogolovka 142432, Moscow Oblast, Russia

来源：

SEMICONDUCTORS | 2001年 / 35卷 / 02期

关键词：

D O I：

10.1134/1.1349920

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of annealing in nitrogen plasma on the photoluminescence and photoconductivity spectra, conduction type, and the surface morphology of gallium nitride films doped with zinc was studied. Emergence of intense ultraviolet edge emission peaking at a wavelength of 376 nm was observed after a high-temperature annealing in nitrogen plasma was detected. An appreciable suppression of blue donor-acceptor and excitonic photoluminescence in annealed GaN:Zn samples was observed. (C) 2001 MAIK "Nauka/Interperiodica".

引用

页码：144 / 148

页数：5

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