Growth studies of GaN and alloys on LiAlO2 by MOVPE

被引：22

作者：

Dikme, Y ^{[1
]}

van Gemmern, P ^{[1
]}

Chai, B ^{[1
]}

Hill, D ^{[1
]}

Szymakowski, A ^{[1
]}

Kalisch, H ^{[1
]}

Heuken, M ^{[1
]}

Jansen, RH ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Theoret Elektrotech, D-52074 Aachen, Germany

来源：

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7 | 2005年 / 2卷 / 07期

关键词：

D O I：

10.1002/pssc.200461414

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Wurtzite GaN is usually used for optoelectronic devices. Because of the growth along the polar c-axis, the strong piezoelectric and spontaneous polarizations fields result in a band bending which is responsible for the poor electron-hole overlap in quantum well structures. The growth along the m-plane direction is one possibility to deposit non-polar material and leads to efficient recombination across the entire well of the QW structure. LiAlO2 (LAO) offers the advantage to grow GaN along the m-plane direction. This work provides the results from investigations on the deposition of GaN-based structures on LAO substrates by metal-organic chemical vapor deposition. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2161 / 2165

页数：5

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