Heteroepitaxy - new challenges and opportunities for materials engineering through molecular beam epitaxy

被引：5

作者：

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷 / 1-4 III期

关键词：

molecular beam epitaxy; magnetic materials; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(01)02252-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We discuss two distinct examples of epitaxy of materials that are very dissimilar in lattice parameter, crystal structure, bonding character and hence. properties. The growth of ferromagnetic hexagonal MnAs on cubic GaAs(0 0 1) opens the door to spin-electronics operating at 300 K and the fabrication of M-plane (Al,Ga,In)N heterostructures on LiAlO2(1 0 0), which are free of internal electric fields, provides the basis for high internal quantum efficiency of blue/UV light emitters. In both examples, the precise materials engineering at the atomic level during interface formation has become possible by using functional self-organized molecular beam epitaxy. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：2028 / 2034

页数：7

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