Single-hole dispersion relation for the real CuO2 plane

被引：80

作者：

Belinicher, VI

Chernyshev, AL

Shubin, VA

机构：

[1] Institute of Semiconductor Physics

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 21期

关键词：

D O I：

10.1103/PhysRevB.54.14914

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Dispersion relation for the CuO2 hole is calculated based on the generalized t-t'-J model, recently derived from the three-band one. Numerical ranges for all model parameters, t/J=2.4-2.7, t'/t=0.0 to -0.25, t ''/t=0.1-0.15, and three-site terms 2t(N) similar to t(S) similar to J/4 have been strongly justified previously. Physical reasons for their values are also discussed. A self-consistent Born approximation is used for the calculation of the hole dispersion. Good agreement between calculated E(k) and one obtained from the angle-resolved photoemission experiments is found. A possible explantation of the broad peaks in the experimental energy distribution curves at the top of the hole band is presented.

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收藏

页码：14914 / 14917

页数：4

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